Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

Details Circular photogalvanic effect in HgTe/CdHgTe quantum well structures Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

2010-02-12

arxiv.org/abs/1002.2528v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed.

Affiliated with

Also associated with

No associations

Rating

Circular photogalvanic effect in HgTe/CdHgTe quantum well structures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Circular photogalvanic effect in HgTe/CdHgTe quantum well structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circular photogalvanic effect in HgTe/CdHgTe quantum well structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-420172