Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells

Details Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells

2003-08-21

arxiv.org/abs/cond-mat/0308420v1

Physics

Condensed Matter

3 pages, 3 figures

Scientific paper

10.1016/j.ssc.2003.08.022

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at
inter-band excitation. The spectral dependence of the CPGE is measured together
with that of the polarization degree of the time resolved photoluminescence. A
theoretical model takes into account spin splitting of conduction and valence
bands.

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