Circuit with small-capacitance high-quality Nb Josephson junctions

Details Circuit with small-capacitance high-quality Nb Josephson junctions Circuit with small-capacitance high-quality Nb Josephson junctions

2003-11-14

arxiv.org/abs/cond-mat/0311332v2

Appl. Phys. Lett. 84, 410 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Published version, RevTeX4

Scientific paper

10.1063/1.1640798

We have developed a fabrication process for nanoscale tunnel junctions which includes focused-ion-beam etching from different directions. By applying the process to a Nb/(Al-)Al_2O_3/Nb trilayer, we have fabricated a Nb single-electron transistor (SET), and characterized the SET at low temperatures, T=0.04-40 K. The superconducting gap energy and the transition temperature of the Nb SET agree with the bulk values, which suggests high quality Nb junctions. The single-electron charging energy of the SET is estimated to be larger than 1 K.

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