Chemically-induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances

Details Chemically-induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances Chemically-induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances

2009-06-14

arxiv.org/abs/0906.2552v1

Nano Letters 9 (7), 2725 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Nano Letters (in press)

Scientific paper

10.1021/nl901226s

We report a first-principles based study of mesoscopic quantum transport in chemically doped graphene nanoribbons with a width up to 10 nm. The occurrence of quasibound states related to boron impurities results in mobility gaps as large as 1 eV, driven by strong electron-hole asymmetrical backscattering phenomena. This phenomenon opens new ways to overcome current limitations of graphene-based devices through the fabrication of chemically-doped graphene nanoribbons with sizes within the reach of conventional lithography.

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