Chemical Vapor Deposition-Assembled Graphene Field-Effect Transistor on Hexagonal Boron Nitride

Details Chemical Vapor Deposition-Assembled Graphene Field-Effect Transistor on Hexagonal Boron Nitride Chemical Vapor Deposition-Assembled Graphene Field-Effect Transistor on Hexagonal Boron Nitride

2011-05-08

arxiv.org/abs/1105.1485v2

Physics

Condensed Matter

Materials Science

12 pages, 4 figures

Scientific paper

We investigate key electrical properties of monolayer graphene assembled by chemical-vapor-deposition (CVD) as impacted by supporting substrate material. Graphene field-effect transistors (GFETs) were fabricated with carbon channel placing directly on hexagonal boron nitride (h-BN) and SiO2, respectively. Small-signal transconductance (gm) and effective carrier mobility ({\mu}eff) are improved by 8.5 and 4 times on h-BN, respectively, as compared with that on SiO2. Compared with GFET with exfoliated graphene on SiO2, gm and {\mu}eff measured from device with CVD graphene on h-BN substrate exhibits comparable values. The experiment demonstrates the potential of employing h-BN as a platform material for large-area carbon electronics.

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