Chemical doping-induced gap opening and spin polarization in graphene

Details Chemical doping-induced gap opening and spin polarization in graphene Chemical doping-induced gap opening and spin polarization in graphene

2007-11-07

arxiv.org/abs/0711.1131v1

Physics

Condensed Matter

Materials Science

9 pages, 2 figures

Scientific paper

By using first principles calculations we report a chemical doping induced gap in graphene. The structural and electronic properties of CrO$_3$ interacting with graphene layer are calculated using ab initio methods based on the density functional theory. The CrO$_3$ acts as an electron acceptor modifying the original electronic and magnetic properties of the graphene surface through a chemical adsorption. The changes induced in the electronic properties are strongly dependent of the CrO$_3$ adsorption site and for some sites it is possible to open a gap in the electronic band structure. Spin polarization effects are also predicted for some adsorption configurations.

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