Charged exciton emission at 1.3 $μ$m from single InAs quantum dots grown by metalorganic chemical vapor deposition

Details Charged exciton emission at 1.3 $μ$m from single InAs quantum dots grown by metalorganic chemical vapor deposition Charged exciton emission at 1.3 $μ$m from single InAs quantum dots grown by metalorganic chemical vapor deposition

2005-05-30

arxiv.org/abs/cond-mat/0505708v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures, submitted APL

Scientific paper

10.1063/1.2093927

We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300 nm; we clearly observe the formation of neutral and charged exciton and biexciton states, and we obtain a biexciton binding energy of 3.1 meV. The dots exhibit an s-p shell splitting of approximately 100 meV, indicating strong confinement.

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