Charged basal stacking fault (BSF) scattering in nitride semiconductors

Details Charged basal stacking fault (BSF) scattering in nitride semiconductors Charged basal stacking fault (BSF) scattering in nitride semiconductors

2010-11-02

arxiv.org/abs/1011.0514v3

Applied Physics Letters, 98, 022109 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1063/1.3543846

A theory of charge transport in semiconductors in the presence of basal
stacking faults is developed. It is shown that the presence of basal stacking
faults leads to anisotropy in carrier transport. The theory is applied to
carrier transport in non-polar GaN films consisting of a large number BSFs, and
the result is compared with experimental data.

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