Charge transport in dual gated bilayer graphene with Corbino geometry

Details Charge transport in dual gated bilayer graphene with Corbino geometry Charge transport in dual gated bilayer graphene with Corbino geometry

2010-10-05

arxiv.org/abs/1010.1036v1

Nano Lett., Article ASAP, October 4, 2010

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 figures

Scientific paper

10.1021/nl102459t

The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperature-dependent resistance is quantitatively described by a two channel conductance model including parallel thermal activation and variable range hopping channels, which gives the electric-field-dependent band gap whose magnitude is found to be in good agreement with infrared absorption experiments. Low temperature transport is similar to previous studies of dual-gated bilayer graphene with edges, suggesting that edge transport does not play an important role.

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