Charge transfer between epitaxial graphene and silicon carbide

Details Charge transfer between epitaxial graphene and silicon carbide Charge transfer between epitaxial graphene and silicon carbide

2010-07-25

arxiv.org/abs/1007.4340v1

Appl. Phys. Lett. 97, 112109 (2010)

Physics

Condensed Matter

Materials Science

3 pages; submitted to APL

Scientific paper

10.1063/1.3487782

We analyse doping of graphene grown on SiC in two models which differ by the source of charge transfered to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyse the responsivity of graphene to the density variation by means of electrostatic gates.

Affiliated with

Also associated with

No associations

Rating

Charge transfer between epitaxial graphene and silicon carbide does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Charge transfer between epitaxial graphene and silicon carbide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge transfer between epitaxial graphene and silicon carbide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-467480