Charge transfer and trapping as origin of a double dip in the transfer characteristics of graphene based field-effect transistors

Details Charge transfer and trapping as origin of a double dip in the transfer characteristics of graphene based field-effect transistors Charge transfer and trapping as origin of a double dip in the transfer characteristics of graphene based field-effect transistors

2011-02-11

arxiv.org/abs/1102.2308v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

14 pages, 5 figures

Scientific paper

We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is proved to arise from charge transfer between graphene and metal electrodes, while charge storage at the graphene/SiO2 interface enhances it. Considering different Fermi energy from the neutrality point along the channel and partial charge pinning at the contacts, we propose a model which explains all features in gate voltage loops.

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