Charge sensitivity of radio frequency single-electron transistor (RF-SET)

Details Charge sensitivity of radio frequency single-electron transistor (RF-SET) Charge sensitivity of radio frequency single-electron transistor (RF-SET)

1999-02-15

arxiv.org/abs/cond-mat/9902206v1

Appl. Phys. Lett. 74, 4052 (1999)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 4 figures

Scientific paper

10.1063/1.123258

A theoretical analysis of the charge sensitivity of the RF-SET is presented. We use the ``orthodox'' approach and consider the case when the carrier frequency is much less than $I/e$ where $I$ is the typical current through RF-SET. The optimized noise-limited sensitivity is determined by the temperature $T$, and at low $T$ it is only 1.4 times less than the sensitivity of conventional single-electron transistor.

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