Charge control in InP/GaInP single quantum dots embedded in Schottky diodes

Details Charge control in InP/GaInP single quantum dots embedded in Schottky diodes Charge control in InP/GaInP single quantum dots embedded in Schottky diodes

2011-07-13

arxiv.org/abs/1107.2522v1

Phys. Rev. B 84 125301 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 4 figures

Scientific paper

10.1103/PhysRevB.84.125301

We demonstrate control by applied electric fi?eld of the charge states in single self-assembled InP quantum dots placed in GaInP Schottky structures grown by metalorganic vapor phase epitaxy. This has been enabled by growth optimization leading to suppression of formation of large dots uncontrollably accumulating charge. Using bias- and polarization-dependent micro-photoluminescence, we identify the exciton multi-particle states and carry out a systematic study of the neutral exciton state dipole moment and polarizability. This analysis allows for the characterization of the exciton wavefunction properties at the single dot level for this type of quantum dots. Photocurrent measurements allow further characterization of exciton properties by electrical means, opening new possibilities for resonant excitation studies for such system.

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