Charge carrier induced lattice strain and stress effects on As activation in Si

Details Charge carrier induced lattice strain and stress effects on As activation in Si Charge carrier induced lattice strain and stress effects on As activation in Si

2008-04-24

arxiv.org/abs/0804.3985v2

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2956401

We studied lattice expansion coefficient due to As using density functional theory with particular attention to separating the impact of electrons and ions. Based on As deactivation mechanism under equilibrium conditions, the effect of stress on As activation is predicted. We find that biaxial stress results in minimal impact on As activation, which is consistent with experimental observations by Sugii et al. [J. Appl. Phys. 96, 261 (2004)] and Bennett et al.[J. Vac. Sci. Tech. B 26, 391 (2008)].

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