Charge carrier density collapse in La_0.67Ca_0.33MnO_3 and La_0.67Sr_0.33MnO_3 epitaxial thin films

Details Charge carrier density collapse in La_0.67Ca_0.33MnO_3 and La_0.67Sr_0.33MnO_3 epitaxial thin films Charge carrier density collapse in La_0.67Ca_0.33MnO_3 and La_0.67Sr_0.33MnO_3 epitaxial thin films

1999-07-22

arxiv.org/abs/cond-mat/9907346v1

Physics

Condensed Matter

Materials Science

5 pages, 5 EPS figures, submitted to Eur. Phys. J. B

Scientific paper

10.1007/s100510051059

We measured the temperature dependence of the linear high field Hall resistivity of La_0.67Ca_0.33MnO_3 (T_C=232K) and La_0.67Sr_0.33MnO_3 (T_C=345K) thin films in the temperature range from 4K up to 360K in magnetic fields up to 20T. At low temperatures we find a charge carrier density of 1.3 and 1.4 holes per unit cell for the Ca- and Sr-doped compound, respectively. In this temperature range electron-magnon scattering contributes to the longitudinal resistivity. At the ferromagnetic transition temperature T_C a dramatic drop in the number of current carriers $n$ down to 0.6 holes per unit cell, accompanied by an increase in unit cell volume, is observed. Corrections of the Hall data due to a non saturated magnetic state will lead a more pronounced charge carrier density collapse.

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