Physics – Condensed Matter – Materials Science
Scientific paper
2005-03-09
Physics
Condensed Matter
Materials Science
Scientific paper
GaN-nanorods grown on Si(111) substrates are found strain- and defect-free as characterized by micro Raman spectroscopy, secondary electron (SE) and cathode-luminescence (CL) imaging. The matrix supporting the nanorods bears the brunt of all strains, strain-relaxations, and defect generations, giving the nanorods an ideal environment to grow to perfection. Photo-excitations by the Raman laser source and electron irradiation during CL imaging lead to an increase of non-equilibrium electrons, suggesting an effective approach to photo-emitting or field emitting device applications. The nanorods, largely isolated from but perfectly aligned with the sustaining matrix, are grown in excellent epitaxy with the Si substrates.
Chen Yu Qing
Chu Wei-Kan
Hsiao C. L.
Iliev M. N.
Meen James K.
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