Characterization of ZnO:Si Nanocomposite Films Grown by Thermal Evaporation

Details Characterization of ZnO:Si Nanocomposite Films Grown by Thermal Evaporation Characterization of ZnO:Si Nanocomposite Films Grown by Thermal Evaporation

2007-12-30

arxiv.org/abs/0801.0144v1

Physics

Condensed Matter

Materials Science

13 pages with 5 figures

Scientific paper

10.1016/j.physleta.2008.10.028

Nanocomposite thin films of Zinc Oxide and Silicon were grown by co-evaporating powdered ZnO and Si. This resulted in nanocrystallites of ZnO being embedded in Silicon. The mismatch in crystal structures of constituent materials result in the ZnO nanocrystals to exist in a state of stress. This along with oxygen vacancies in the samples result in good Photoluminescence emission at 520nm. Also, Silicon background gave a photoluminescence emission at 620nm. The structure was found quite stable over time since the homgenously dispersed ZnO nanocrystals do not agglomerate. The nanocomposites promises to be a useful candidate for future optoelectronic devices.

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