Characterization of the Torsional Piezoelectric-like Response of Tantalum Trisulfide Associated with Charge-Density-Wave Depinning

Details Characterization of the Torsional Piezoelectric-like Response of Tantalum Trisulfide Associated with Charge-Density-Wave Depinning Characterization of the Torsional Piezoelectric-like Response of Tantalum Trisulfide Associated with Charge-Density-Wave Depinning

2009-05-14

arxiv.org/abs/0905.2426v2

Physics

Condensed Matter

Strongly Correlated Electrons

11 pages, including 3 figures, to be published in Phys. Rev. B (Rapid Comm.)

Scientific paper

We have studied the frequency and voltage dependence of voltage-induced torsional strains in orthorhombic TaS3 [V. Ya. Pokrovskii, et al, Phys. Rev. Lett. 98, 206404 (2007)] by measuring the modulation of the resonant frequency of an RF cavity containing the sample. The strain has an onset voltage below the charge-density-wave (CDW) threshold voltages associated with changes in shear compliance and resistance, suggesting that the strain is associated with polarization of the CDW rather than CDW current. Measurements with square-wave voltages show that the strain is very sluggish, not even reaching its dc value at a frequency of 0.1 Hz, but the dynamics appear to be very sample dependent. By applying oscillating torque while biasing the sample with a dc current, we have also looked for strain induced voltage in the sample; none is observed at the low biases where the voltage-induced strains first occur, but an induced voltage is observed at higher biases, probably associated with strain-dependent CDW conductance.

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