Characterization of the Schottky Barrier in SrRuO3/Nb:SrTiO3 Junctions

Physics – Condensed Matter – Strongly Correlated Electrons

Scientific paper

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15 pages, 3 figures

Scientific paper

10.1063/1.2719157

Internal photoemission spectroscopy was used to determine the Schottky barrier height in rectifying SrRuO3/Nb-doped SrTiO3 junctions for 0.01 wt % and 0.5 wt % Nb concentrations. Good agreement was obtained with the barrier height deduced from capacitance-voltage measurements, provided that a model of the nonlinear permittivity of SrTiO3 was incorporated in extrapolating the built-in potential, particularly for high Nb concentrations. Given the generic polarizability of perovskites under internal/external electric fields, internal photoemission provides a valuable independent probe of the interface electronic structure.

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