Physics – Condensed Matter – Materials Science
Scientific paper
2011-06-02
Phys. Rev. B 82 (2010) 165420
Physics
Condensed Matter
Materials Science
Scientific paper
10.1103/PhysRevB.82.165420
Silicon thin films for coverages ($\theta$) between 0.3 and 3 monolayers have been grown on rutile \ce{TiO2}(110)-(1x1) at room temperature and studied by x-ray and ultra-violet photoelectron spectroscopies, Auger electron spectroscopy, and low energy electron diffraction (LEED). A clear evidence of a strong \ce{Si}/\ce{TiO2} interaction consistent with the high affinity of O for Si has been found. The Ti cations on the substrate are reduced, while the Si film is oxidized, yielding \ce{SiO2} and a mixture of silicon suboxides. Neutral Si atoms are observed at a coverage of 3 monolayers. At the interface region we observe the formation of cross-linking Ti-O-Si bonds. The thin Si overlayer strongly attenuates the $(1 \times 1)$ LEED pattern from the substrate. Finally, thermal annealing results in the improvement of the \ce{SiO2} stoichiometry, but the surface order is not recovered. Using ab-initio density functional theory we have obtained optimum geometrical configurations and corresponding density of states for 1/3 \le \theta \le 1$ monolayers of Si adsorbed on the $1 \times 1$ two-dimensional unit cell.
Abad José
de Andres Pedro L.
Gonzalez Carlos
Roman Eric
No associations
LandOfFree
Characterization of silicon thin overlayers on rutile \ce{TiO2} (110)-(1x1) does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Characterization of silicon thin overlayers on rutile \ce{TiO2} (110)-(1x1), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Characterization of silicon thin overlayers on rutile \ce{TiO2} (110)-(1x1) will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-495006