Characterization of Disorder in Semiconductors via Single-Photon Interferometry

Details Characterization of Disorder in Semiconductors via Single-Photon Interferometry Characterization of Disorder in Semiconductors via Single-Photon Interferometry

2006-11-15

arxiv.org/abs/cond-mat/0611411v1

Physical Review Letters 97, 227402 (2006)

Physics

Condensed Matter

Disordered Systems and Neural Networks

4 pages, 2 figures, accepted for PRL

Scientific paper

10.1103/PhysRevLett.97.227402

The method of angular photonic correlations of spontaneous emission is introduced as an experimental, purely optical scheme to characterize disorder in semiconductor nanostructures. The theoretical expression for the angular correlations is derived and numerically evaluated for a model system. The results demonstrate how the proposed experimental method yields direct information about the spatial distribution of the relevant states and thus on the disorder present in the system.

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