Characterization of All-Chromium Tunnel Junctions and Single Electron Tunneling Devices Fabricated by Direct-Writing Multilayer Technique

Details Characterization of All-Chromium Tunnel Junctions and Single Electron Tunneling Devices Fabricated by Direct-Writing Multilayer Technique Characterization of All-Chromium Tunnel Junctions and Single Electron Tunneling Devices Fabricated by Direct-Writing Multilayer Technique

1999-07-06

arxiv.org/abs/cond-mat/9907078v1

J. Appl. Phys. 86, p. 6956-6964 (1999)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

19 pages, 9 figures

Scientific paper

10.1063/1.371778

We report about the fabrication and analysis of the properties of Cr/CrO_x/Cr tunnel junctions and SET transistors, prepared by different variants of direct-writing multilayer technique. In all cases, the CrO_x tunnel barriers were formed in air under ambient conditions. From the experiments on single junctions, values for the effective barrier height and thickness were derived. For the Cr/CrO_x/Cr SET transistors we achieved minimal junction areas of 17 x 60 nm^2 using a scanning transmission electron microscope for the e-beam exposure on Si_3N_4 membrane substrate. We discuss the electrical performance of the transistor samples as well as their noise behavior.

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