Characterization of a fabrication process for the integration of superconducting qubits and RSFQ circuits

Details Characterization of a fabrication process for the integration of superconducting qubits and RSFQ circuits Characterization of a fabrication process for the integration of superconducting qubits and RSFQ circuits

2006-04-24

arxiv.org/abs/cond-mat/0604547v1

Physics

Condensed Matter

Superconductivity

Scientific paper

10.1088/0953-2048/19/8/030

In order to integrate superconducting qubits with rapid-single-flux-quantum (RSFQ) control circuitry, it is necessary to develop a fabrication process that fulfills at the same time the requirements of both elements: low critical current density, very low operating temperature (tens of milliKelvin) and reduced dissipation on the qubit side; high operation frequency, large stability margins, low dissipated power on the RSFQ side. For this purpose, VTT has developed a fabrication process based on Nb trilayer technology, which allows the on-chip integration of superconducting qubits and RSFQ circuits even at very low temperature. Here we present the characterization (at 4.2 K) of the process from the point of view of the Josephson devices and show that they are suitable to build integrated superconducting qubits.

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