Characterization and Predictive Modeling of Epitaxial Silicon-Germanium Thermistor Layers

Details Characterization and Predictive Modeling of Epitaxial Silicon-Germanium Thermistor Layers Characterization and Predictive Modeling of Epitaxial Silicon-Germanium Thermistor Layers

2011-12-09

arxiv.org/abs/1112.2043v1

Physics

Condensed Matter

Materials Science

Scientific paper

The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation. Predictive simulation using drift-diffusion formalism and self-consistent quantum-mechanical solutions yielded similar results, TCR around 2%/K at 300 K. This modeling approach can be used for different, graded and constant, SiGe profiles,. It is also capable of predicting the influence of background auto-doping on the TCR of the detectors

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