Characteristics around oxygen and silicon K absorption edges of a charge-coupled device

Details Characteristics around oxygen and silicon K absorption edges of a charge-coupled device Characteristics around oxygen and silicon K absorption edges of a charge-coupled device

Jul 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000spie.4012..539m&link_type=abstract

Proc. SPIE Vol. 4012, p. 539-547, X-Ray Optics, Instruments, and Missions III, Joachim E. Truemper; Bernd Aschenbach; Eds.

Physics

Optics

1

Scientific paper

We measure various spectral response characteristics around the oxygen and silicon K absorption edges of a Charge- Coupled Device X-ray detector used in the X-ray Imaging Spectrometer developed for the ASTRO-E mission. We have evaluated X-ray Absorption Fine Structure (XAFS) around oxygen K edge in detail. A strong absorption peak of 45% is confirmed just above the oxygen K edge and an oscillatory structure follows whose amplitude decreases from 20% at the edge to less than 1% at 0.9 keV. We also show XAFS and discuss on a change of the response function around the silicon K edge. The discontinuity of the signal pulse height at the silicon K edge is less than 1.8 eV. We determine the thickness of silicon, silicon dioxide, and silicon nitride in the dead layer using the depth of the absorption edge.

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