Chaotic Quantum Transport near the Charge Neutrality Point in Inverted Type-II InAs/GaSb Field-Effect Transistors

Details Chaotic Quantum Transport near the Charge Neutrality Point in Inverted Type-II InAs/GaSb Field-Effect Transistors Chaotic Quantum Transport near the Charge Neutrality Point in Inverted Type-II InAs/GaSb Field-Effect Transistors

2012-04-03

arxiv.org/abs/1204.0561v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

We present here our recent quantum transport results around the charge neutrality point (CNP) in a type-II InAs/GaSb field-effect transistor. At zero magnetic field, a conductance minimum close to 4e^2/h develops at the CNP and it follows semi-logarithmic temperature dependence. In quantized magnetic (B) fields and at low temperatures, well developed integer quantum Hall states are observed in the electron as well as hole regimes. Quantum transport shows noisy-like behavior around the CNP at extremely high B fields. Surprisingly, when the diagonal conductivity \sigma_{xx} is plotted against the Hall conductivity \sigma_{xy}, a circular conductivity law is discovered, suggesting a chaotic quantum transport behavior.

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