Channel-Width Dependent Enhancement in Nanoscale Field Effect Transistor

Details Channel-Width Dependent Enhancement in Nanoscale Field Effect Transistor Channel-Width Dependent Enhancement in Nanoscale Field Effect Transistor

2008-02-15

arxiv.org/abs/0802.2140v1

Physics

Condensed Matter

Other Condensed Matter

5 pages, 4 figures, two-column format. Related papers can be found at http://nano.bu.edu

Scientific paper

We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional metal-oxide-semiconductor field-effect transistors in reverse source drain bias. Reduction of nanowire width below 200 nm leads to dramatic change in the threshold voltage. Due to increased surface-to-volume ratio, these devices show higher transconductance per unit width at smaller width. Our devices with nanoscale channel width demonstrate extreme sensitivity to surface field profile, and therefore can be used as logic elements in computation and as ultrasensitive sensors of surface-charge in chemical and biological species.

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