Catalyst-free selective area growth of InN nanocolumns by MBE

Details Catalyst-free selective area growth of InN nanocolumns by MBE Catalyst-free selective area growth of InN nanocolumns by MBE

2009-05-19

arxiv.org/abs/0905.3133v1

Physics

Condensed Matter

Materials Science

Scientific paper

Selective area growth of InN nanorods by plasma assisted molecular beam epitaxy is demonstrated. Molybdenum is found to be a suitable mask material at the low substrate temperature of 475 C needed for the growth of InN nanocolumns. The growth of arrays of single nanorods on a Si(111) substrate has been achieved with a thin molybdenum mask lithographically patterned with holes smaller than 60 nm.

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