Carrier trapping and luminescence polarization in quantum dashes

Details Carrier trapping and luminescence polarization in quantum dashes Carrier trapping and luminescence polarization in quantum dashes

2011-07-21

arxiv.org/abs/1107.4332v2

Phys. Rev. B 85, 035314 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

13 pages, 9 figures; considerably extended, additional discussion and new figures included

Scientific paper

10.1103/PhysRevB.85.035314

We study experimentally and theoretically polarization-dependent luminescence from an ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy (quantum dashes). We show that the measured degree of linear polarization of the emitted light increases with the excitation power and changes with temperature in a non-trivial way, depending on the excitation conditions. Using an approximate model based on the k.p theory, we are able to relate this degree of polarization to the amount of light hole admixture in the exciton states which, in turn, depends on the symmetry of the envelope wave function. Agreement between the measured properties and theory is reached under assumption that the ground exciton state in a quantum dash is trapped in a confinement fluctuation within the structure and thus localized in a much smaller volume of much lower asymmetry than the entire nanostructure.

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