Carrier relaxation process of V-grooved AlGaAs/GaAs quantum wire modified by selective implantation-induced intermixing

Details Carrier relaxation process of V-grooved AlGaAs/GaAs quantum wire modified by selective implantation-induced intermixing Carrier relaxation process of V-grooved AlGaAs/GaAs quantum wire modified by selective implantation-induced intermixing

Apr 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3629..163l&link_type=abstract

Proc. SPIE Vol. 3629, p. 163-171, Photodetectors: Materials and Devices IV, Gail J. Brown; Manijeh Razeghi; Eds.

Physics

1

Scientific paper

In this letter, self-aligned dual implantation technique was successfully used to speed up the carrier transportation from sidewall quantum well (SQWL) to quantum wire (QWR) region in V-groove AlGaAs/GaAs QWR structure. Photoluminescence (PL) and time resolved photoluminescence (TRPL) show that the lateral confinement was enhanced after intermixing by intermixing the necking region. Lifetime was obviously enlonged after selective intermixing, which comes from the enhanced lateral carrier confinement. Strong hot exciton relaxation process in QWRs region is observed after selective intermixing.

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