Physics – Condensed Matter – Materials Science
Scientific paper
2008-05-22
Physics
Condensed Matter
Materials Science
8 pages, 2 figures, submitted as an extended abstract to the E-MRS Spring Meeting 2008
Scientific paper
Carrier relaxation due to both optical and nonradiative intraband transitions
in silicon quantum dots in SiO$_2$ has been considered. Interaction of confined
holes with optical phonons has been studied. The Huang-Rhys factor is
calculated for such transitions. The probability of intraband transition of a
confined hole emitting several optical phonons is estimated.
Goupalov Serguei V.
Moskalenko A. S.
Poddubny Alexander N.
Prokofiev Alexander
Yassievich I. N.
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