Carrier recombination dynamics in InGaN/GaN multiple quantum wells

Details Carrier recombination dynamics in InGaN/GaN multiple quantum wells Carrier recombination dynamics in InGaN/GaN multiple quantum wells

2010-04-14

arxiv.org/abs/1004.2463v3

Phys. Rev. B 82, 085305 (2010) [5 pages]

Physics

Condensed Matter

Materials Science

11 pages, 3 figures, accepted for publication in PHYSICAL REVIEW B

Scientific paper

10.1103/PhysRevB.82.085305

We have mesured the carrier recombination dynamics in InGaN/GaN multiple quantum wells over an unprecedented range in intensity. We find that at times shorter than 30\,ns, they follow an exponential form, and a power law at times longer than 1\,$\mu$s. To explain these biphasic dynamics, we propose a simple three-level model where a charge-separated state interplays with the radiative state through charge transfer following a tunneling mechanism. We show how the distribution of distances in charge-separated states controls the dynamics at long time. Our results imply that charge recombination happens on nearly-isolated clusters of localization centers.

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