Carrier induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers

Details Carrier induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers Carrier induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers

1999-10-08

arxiv.org/abs/cond-mat/9910131v1

Physics

Condensed Matter

Materials Science

3 figures Ninth International Conference on II-VI Compounds, Kyoto, Japan, november 1999

Scientific paper

10.1063/1.372735

p-type doping of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes clearly induce a ferromagnetic interaction between the localized spins, which is discussed as a function of Mn content and hole concentration.

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