Carrier-independent ferromagnetism and giant anomalous Hall effect in magnetic topological insulator

Details Carrier-independent ferromagnetism and giant anomalous Hall effect in magnetic topological insulator Carrier-independent ferromagnetism and giant anomalous Hall effect in magnetic topological insulator

2011-08-24

arxiv.org/abs/1108.4754v1

Physics

Condensed Matter

Materials Science

20pages,4 figures

Scientific paper

Breaking the time-reversal symmetry of a topological insulator (TI) by ferromagnetism can induce exotic magnetoelectric phenomena such as quantized anomalous Hall (QAH) effect. Experimental observation of QAH effect in a magnetically doped TI requires ferromagnetism not relying on the charge carriers. We have realized the ferromagnetism independent of both polarity and density of carriers in Cr-doped BixSb2-xTe3 thin films grown by molecular beam epitaxy. Meanwhile, the anomalous Hall effect is found significantly enhanced with decreasing carrier density, with the anomalous Hall angle reaching unusually large value 0.2 and the zero field Hall resistance reaching one quarter of the quantum resistance (h/e2), indicating the approaching of the QAH regime. The work paves the way to ultimately realize QAH effect and other unique magnetoelectric phenomena in TIs.

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