Physics – Condensed Matter – Materials Science
Scientific paper
2005-07-11
Physical Review B 70, 235330 (2005)
Physics
Condensed Matter
Materials Science
6 pages, 7 figures
Scientific paper
10.1103/PhysRevB.70.235330
We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both experimentally and using a three-dimensional carrier dynamics simulation. A uniform density of vacancies was formed over the optical absorption depth of bulk GaAs samples by performing multi-energy implantations of arsenic ions (1 and 2.4MeV) and subsequent thermal annealing. In a series of THz emission experiments the frequency of peak THz power was found to increase significantly from 1.4 to 2.2THz when the ion implantation dose was increased from 10^13 to 10^16 cm-3. We used a semi-classical Monte-Carlo simulation of ultra-fast carrier dynamics to reproduce and explain these results. The effect of the ion-induced damage was included in the simulation by considering carrier scattering at neutral and charged impurities, as well as carrier trapping at defect sites. Higher vacancy concentrations and shorter carrier trapping times both contributed to shorter simulated THz pulses, the latter being more important over experimentally realistic parameter ranges.
Castro-Camus E.
Fraser Michael D.
Jagadish Chennupati
Johnston M. B.
Lloyd-Hughes James
No associations
LandOfFree
Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-404423