Carrier Density Collapse and Colossal Magnetoresistance in Doped Manganites

Details Carrier Density Collapse and Colossal Magnetoresistance in Doped Manganites Carrier Density Collapse and Colossal Magnetoresistance in Doped Manganites

1998-06-02

arxiv.org/abs/cond-mat/9806030v2

Phys. Rev. Lett. 82, 141 (1999)

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, REVTeX 3.0, 3 EPS-figures embedded via epsf. Added - inset in Fig. 2; Ref.[32]; footnotes [29], [30], [33]

Scientific paper

10.1103/PhysRevLett.82.141

A novel ferromagnetic transition, accompanied by carrier density collapse, is found in doped charge-transfer insulators with strong electron-phonon coupling. The transition is driven by an exchange interaction of polaronic carriers with localized spins; the strength of the interaction determines whether the transition is first or second order. A giant drop in the number of current carriers during the transition, which is a consequence of bound pairs formation in the paramagnetic phase close to the transition, is extremely sensitive to an external magnetic field. This carrier density collapse describes the resistivity peak and the colossal magnetoresistance of doped manganites.

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