Carrier density change in Colossal Magnetoresistive Pyrochlore Tl2Mn2O7

Details Carrier density change in Colossal Magnetoresistive Pyrochlore Tl2Mn2O7 Carrier density change in Colossal Magnetoresistive Pyrochlore Tl2Mn2O7

1999-10-22

arxiv.org/abs/cond-mat/9910345v1

Physics

Condensed Matter

Materials Science

7 REVTeX pages, 5 eps figures, submitted to PRL

Scientific paper

10.1103/PhysRevB.62.12190

Hall resistivity and magneto-thermopower have been measured for colossal magnetoresistive Tl2Mn2O7 over wide temperature and magnetic-field ranges. These measurements revealed that a small number of free electron-like carriers is responsible for the magneto-transport properties. In contrast to perovskite CMR materials, the anomalous Hall coefficient is negligible even in the ferromagnetic state due to negligibly small skew scattering. The characteristic feature in Tl2Mn2O7 is that the carrier density changes with temperature and the magnetic field. The carrier density increases around TC as the temperature is lowered or as the magnetic field is increased, which explains the CMR of this material. The conduction-band-edge shift, which is caused by the strong s-d interaction between localized Mn moments and s-like conduction electrons, is a possible mechanism for the carrier density change.

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