Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey

Details Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey

2004-08-02

arxiv.org/abs/cond-mat/0408021v1

Physics

Condensed Matter

Materials Science

2 pages, 2 figures. To appear in the proceedings of the 27th International Conference on the Physics of Semiconductors (ICPS-2

Scientific paper

10.1063/1.1994621

We have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary the Te compensation and drive the system through a metal-insulator transition (MIT). This MIT is associated with enhanced low-temperature magnetization and an evolution from concave to convex temperature-dependent magnetization.

Affiliated with

Also associated with

No associations

Rating

Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-299358