Carbon nanotubes on partially depassivated n-doped Si(100)-(2x1):H substrates

Details Carbon nanotubes on partially depassivated n-doped Si(100)-(2x1):H substrates Carbon nanotubes on partially depassivated n-doped Si(100)-(2x1):H substrates

2009-06-17

arxiv.org/abs/0906.3310v1

Phys. Rev. B 80, 045415 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 Figures, 1 Table. Accepted for publication in Physical Review B

Scientific paper

10.1103/PhysRevB.80.045415

We present a study on the mechanical configuration and the electronic properties of semiconducting carbon nanotubes supported by partially depassivated silicon substrates, as inferred from topographic and spectroscopic data acquired with a room-temperature ultrahigh vacuum scanning tunneling microscope and density-functional theory calculations. A mechanical distortion and doping for semiconducting carbon nanotubes on Si(100)-(2x1):H with hydrogen-depassivated stripes up to 100 Angstrom wide are ascertained from both experiment and theory. The results presented here point towards novel and local functionalities of nanotube-semiconductor interfaces.

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