Carbon Nanotubes as Schottky Barrier Transistors

Details Carbon Nanotubes as Schottky Barrier Transistors Carbon Nanotubes as Schottky Barrier Transistors

2002-07-16

arxiv.org/abs/cond-mat/0207397v1

Physics

Condensed Matter

Materials Science

4 pages, 5 figures, appears in Physical Review Letters

Scientific paper

10.1103/PhysRevLett.89.106801

We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors", in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calculated for both idealized and realistic geometries, and scaling behavior is demonstrated. Our results explain a variety of experimental observations, including the quite different effects of doping and adsorbed gases. The electrode geometry is shown to be crucial for good device performance.

Affiliated with

Also associated with

No associations

Rating

Carbon Nanotubes as Schottky Barrier Transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Carbon Nanotubes as Schottky Barrier Transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Carbon Nanotubes as Schottky Barrier Transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-42776