Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs

Details Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs

2005-03-14

arxiv.org/abs/cond-mat/0503323v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.1926409

Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.

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