Capture of carriers to screened charged centres and low temperature shallow impurity electric field break down in semiconductors

Details Capture of carriers to screened charged centres and low temperature shallow impurity electric field break down in semiconductors Capture of carriers to screened charged centres and low temperature shallow impurity electric field break down in semiconductors

1998-07-24

arxiv.org/abs/cond-mat/9807327v1

Physics

Condensed Matter

8 pages, latex, 1 figure in gif format, to be submitted to "Journal of Condensed Matter"

Scientific paper

10.1088/0953-8984/10/38/012

Free carrier capture by a screened Coulomb potential in semiconductors are
considered. It is established that with decreasing screening radius the capture
cross section decreases drastically, and it goes to zero when $% r_s=a_B^{*}$.
On the basis of this result a new mechanism of shallow impurity electric field
break down in semiconductors is suggested.

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