Capture of carriers to screened charged centres and low temperature shallow impurity electric field break down in semiconductors

Physics – Condensed Matter

Scientific paper

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8 pages, latex, 1 figure in gif format, to be submitted to "Journal of Condensed Matter"

Scientific paper

10.1088/0953-8984/10/38/012

Free carrier capture by a screened Coulomb potential in semiconductors are
considered. It is established that with decreasing screening radius the capture
cross section decreases drastically, and it goes to zero when $% r_s=a_B^{*}$.
On the basis of this result a new mechanism of shallow impurity electric field
break down in semiconductors is suggested.

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