Capping-induced suppression of annealing in Ga(1-x)Mn(x)As epilayers

Details Capping-induced suppression of annealing in Ga(1-x)Mn(x)As epilayers Capping-induced suppression of annealing in Ga(1-x)Mn(x)As epilayers

2003-07-10

arxiv.org/abs/cond-mat/0307255v1

Physics

Condensed Matter

13 pages with figures attatched

Scientific paper

10.1063/1.1629376

We have studied the effects of capping ferromagnetic Ga(1-x)Mn(x)As epilayers with a thin layer of undoped GaAs, and we find that even a few monolayers of GaAs have a significant effect on the ferromagnetic properties. In particular, the presence of a capping layer only 10 monolayers thick completely suppresses the enhancement of the ferromagnetism associated with low temperature annealing. This result, which demonstrates that the surface of a Ga(1-x)Mn(x)As epilayer strongly affects the defect structure, has important implications for the incorporation of Ga(1-x)Mn(x)As into device heterostructures.

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