Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields

Details Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields

1995-01-11

arxiv.org/abs/cond-mat/9501041v1

Physics

Condensed Matter

4 pages, Revtex. 4 PostScript figures in an uuencoded compressed file available upon request. Phys. Rev.B, in press

Scientific paper

10.1103/PhysRevB.51.10181

A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher 2D gas subbands. The results of full self-consistent numerical calculations are compared to recent experimental data.

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