Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures

Details Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures

2009-08-10

arxiv.org/abs/0908.1287v1

Physica B 404 (2009) 4705--4707

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Reported at the 25th International Conference on Defects in Semiconductors, St. Petersburg, Russia, July 20-24, 2009

Scientific paper

10.1016/j.physb.2009.08.164

Electrical properties of multilayer arrays of germanium nanoclusters grown on the silicon (001) surface at low temperature have been studied. A correlation between the quantum dot (QD) density estimated from STM and the charge accumulated by QD layers as extracted from C-V characteristics was revealed. Temperature dependence of the C-V characteristics was studied. At low temperatures, the hysteresis was observed. DLTS spectra measured on the structures with different QD arrangements demonstrated essential distinctions.

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