Canted antiferromagnetic phase of the $ν=0$ quantum Hall state in bilayer graphene

Details Canted antiferromagnetic phase of the $ν=0$ quantum Hall state in bilayer graphene Canted antiferromagnetic phase of the $ν=0$ quantum Hall state in bilayer graphene

2011-05-26

arxiv.org/abs/1105.5386v1

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, 3 figs

Scientific paper

Motivated to understand to nature of the strongly insulating $\nu=0$ state in bilayer graphene, we develop the theory of the state in the framework of quantum Hall ferromagnetism. The generic phase diagram, obtained in the presence of the isospin anisotropy, electric bias, and Zeeman effects, consists of the spin-polarized ferromagnetic (F), canted antiferromagnetic (CAF), and partially (PLP) and fully (FLP) layer-polarized phases. We address the edge transport properties of the phases. Comparing our findings with the recent data on suspended dual-gated devices, we conclude that the insulating $\nu=0$ state realized in bilayer graphene at lower electric bias is the CAF phase. We also predict a crossover and a phase transition from the insulating CAF and FLP phases, respectively, to the F phase with metallic edge conductance $2e^2/h$ by tilting the magnetic field, which could be within the reach of available fields.

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