Can impact excitation explain efficient carrier multiplication in carbon nanotube photodiodes?

Details Can impact excitation explain efficient carrier multiplication in carbon nanotube photodiodes? Can impact excitation explain efficient carrier multiplication in carbon nanotube photodiodes?

2010-05-15

arxiv.org/abs/1005.2671v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

We address recent experiments (Science 325, 1367 (2009)) reporting on highly efficient multiplication of electron-hole pairs in carbon nanotube photodiodes at photon energies near the carrier multiplication threshold (twice the quasi-particle band gap). This result is surprising in light of recent experimental and theoretical work on multiexciton generation in other confined materials, such as semiconducting nanocrystals. We propose a detailed mechanism based on carrier dynamics and impact excitation resulting in highly efficient multiplication of electron-hole pairs. We discuss the important time and energy scales of the problem and provide analysis of the role of temperature and the length of the diode.

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