Calculations of exchange interaction in impurity band of two-dimensional semiconductors with out of plane impurities

Details Calculations of exchange interaction in impurity band of two-dimensional semiconductors with out of plane impurities Calculations of exchange interaction in impurity band of two-dimensional semiconductors with out of plane impurities

1999-06-16

arxiv.org/abs/cond-mat/9906242v1

Physics

Condensed Matter

Strongly Correlated Electrons

14 pages, RevTeX, 5 figures. Submitted to Phys Rev. B

Scientific paper

10.1103/PhysRevB.60.15848

We calculate the singlet-triplet splitting for a couple of two-dimensional electrons in the potential of two positively charged impurities which are located out of plane. We consider different relations between vertical distances of impurities $h_1$ and $h_2$ and their lateral distance $R$. Such a system has never been studied in atomic physics but the methods, worked out for regular two-atomic molecules and helium atom, have been found to be useful. Analytical expressions for several different limiting configurations of impurities are obtained an interpolated formula for intermediate range of parameters is proposed. The $R$-dependence of the splitting is shown to become weaker with increasing $h_1,h_2$.

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