Calculation of DOS-Dependent Channel Potentials in FETs in the Saturation Condition

Details Calculation of DOS-Dependent Channel Potentials in FETs in the Saturation Condition Calculation of DOS-Dependent Channel Potentials in FETs in the Saturation Condition

2007-09-20

arxiv.org/abs/0709.3298v1

Physics

Condensed Matter

Materials Science

9 pages, 2 figures

Scientific paper

We calculated functions for the potential, Vch, in the channel of a field effect transistor with various densities of the localized states (DOS) by using a device simulator. In the saturation condition, Vch is found to fit satisfactorily to the analytical function, Vch(y)=Vg(1-(1-y/L) k), where Vg is the gate bias, y is the position along the channel, and L is the channel length. The power k, which depends on the DOS, ranges from 0 to 0.5 even with an extensive variation of DOS. As a result, the total induced charge density in the saturation condition can be expressed a way similar to the linear condition by introducing a correction factor, alpha, ranging between 0.65 and 1.0.

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