Calculation of Cu/Ta interface electron transmission and effect on conductivity in nanoscale interconnect technology

Details Calculation of Cu/Ta interface electron transmission and effect on conductivity in nanoscale interconnect technology Calculation of Cu/Ta interface electron transmission and effect on conductivity in nanoscale interconnect technology

2009-07-17

arxiv.org/abs/0907.2999v2

Appl. Phys. Lett. 95, 222101 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

To appear in Appl. Phys. Lett., Nov. 2009. Replaced with version accepted for publication, clarifies discussion of semiclassic

Scientific paper

10.1063/1.3257700

Resistivity augmentation in nanoscale metal interconnects is a performance limiting factor in integrated circuits. Here we present calculations of electron scattering and transmission at the interface between Cu interconnects and their barrier layers, in this case Ta. We also present a semiclassical model to predict the technological impact of this scattering and find that a barrier layer can significantly decrease conductivity, consistent with previously published measurements.

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